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IPG20N04S409AATMA1

  •  IPG20N04S409AATMA1
  • image of 晶体管 - FET,MOSFET - 阵列 IPG20N04S409AATMA1
IPG20N04S409AATMA1
Transistors - FETs, MOSFETs - Arrays
Infineon Technologies
N-CHANNEL POWER
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Bulk
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TYPEDESCRIPTION
MfrInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
PackageBulk
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs8.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id4V @ 22µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2250pF @ 25V
Power - Max54W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-4
Base Product NumberIPG20N
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 Orignal genuine       Each chip comes from the original factory


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 Main products       Only make original stock


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 Spot inventory       Only make original stock

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Original stockBom DistributioAffordable Price

405

1.48

599.4

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