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IRF7325PBF

  •  IRF7325PBF
  • image of 金属氧化物半导体场效应晶体管阵列 IRF7325PBF
IRF7325PBF
MOSFETs Transistors Arrays
Infineon Technologies
IRF7325PBF data
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8-SOIC (0.154, 3.90mm Width)
YES
TYPEDESCRIPTION
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HEXFET®
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number IRF7325PBF
Power - Max 2W
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 24m Ω @ 7.8A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2020pF @ 10V
Current - Continuous Drain (Id) @ 25°C 7.8A
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
FET Feature Logic Level Gate
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