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BUK9907-55ATE,127

  •  BUK9907-55ATE,127
  • image of 单金属氧化物半导体场效应晶体管晶体管 BUK9907-55ATE,127
BUK9907-55ATE,127
Single MOSFETs Transistors
NXP USA Inc.
N-Channel Tube
-
TO-220-5
YES
TYPEDESCRIPTION
Mounting Type Through Hole
Package / Case TO-220-5
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMOS™
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 5
JESD-30 Code R-PSFM-T5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 272W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5836pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 108nC @ 5V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±15V
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0077Ohm
Pulsed Drain Current-Max (IDM) 560A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 500 mJ
FET Feature Temperature Sensing Diode
RoHS Status ROHS3 Compliant
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