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IPA80R460CEXKSA1

  •  IPA80R460CEXKSA1
  • image of 单金属氧化物半导体场效应晶体管晶体管 IPA80R460CEXKSA1
IPA80R460CEXKSA1
Single MOSFETs Transistors
Infineon Technologies
N-Channel Tube
-
TO-220-3 Full Pack
YES
TYPEDESCRIPTION
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Series CoolMOS™ CE
Published 2015
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 34W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 460m Ω @ 7.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 680μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 10.8A
Drain-source On Resistance-Max 0.46Ohm
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 470 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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