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IRFR4105ZTRLPBF

  •  IRFR4105ZTRLPBF
  • image of 单金属氧化物半导体场效应晶体管晶体管 IRFR4105ZTRLPBF
IRFR4105ZTRLPBF
Single MOSFETs Transistors
Infineon Technologies
N-Channel Tape
-
TO-252-3, DPak (2 Leads + Tab), SC-63
YES
TYPEDESCRIPTION
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-Pak
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Number of Elements 1
Power Dissipation-Max 48W Tc
Element Configuration Single
Power Dissipation 48W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 24.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 40ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Input Capacitance 740pF
Drain to Source Resistance 24.5mOhm
Rds On Max 24.5 mΩ
Height 2.38mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
RoHS Status RoHS Compliant
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