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SPP80N03S2L05AKSA1

  •  SPP80N03S2L05AKSA1
  • image of 单金属氧化物半导体场效应晶体管晶体管 SPP80N03S2L05AKSA1
SPP80N03S2L05AKSA1
Single MOSFETs Transistors
Infineon Technologies
N-Channel Tube
-
TO-220-3
YES
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2003
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 167W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 167W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 55A, 10V
Vgs(th) (Max) @ Id 2V @ 110μA
Input Capacitance (Ciss) (Max) @ Vds 3320pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 89.7nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0075Ohm
RoHS Status ROHS3 Compliant
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